180 nm XP018 5V Bandgaps IP cell abgpc08_5v included in Analog Library A_CELLS_5V Bandgap reference with second-order curvature correction. X-FAB 180 nm XT018 5V Bandgaps IP cell abgpc08_5v included in Analog Library A_CELLS_5V Bandgap reference with curvature compensation and polysilicon resistors. X-FAB 350 nm XH035 3.3V Bandgaps IP cell abgpc09 included in Analog Library A_CELLS_3V3 Low-voltage bandgap reference with N-well resistors. X-FAB 350 nm XH035 5V Bandgaps IP cell abgpc10 included in Analog Library A_CELLS_HV Middle-voltage bandgap reference with N+ HRES Polysilicon resistors. X-FAB 180 nm XT018 5V Bandgaps IP cell abgpc10_5v included in Analog Library A_CELLS_5V Bandgap reference with curvature compensation and polysilicon resistors. X-FAB 180 nm XP018 5V Bandgaps IP cell abgpc10_5v included in Analog Library A_CELLS_5V Low supply voltage bandgap reference with second-order curvature correction. X-FAB 350 nm XH035 3.3V Bandgaps IP cell abgpc11 included in Analog Library A_CELLS_3V3 Low-voltage, low-power bandgap reference with N-well resistors. X-FAB 0.60 µm XC06 5V Bias IP cell abiac01 included in Analog Library A_CELLS_5V General purpose low-current bias cell. It forces a current of apprx. 200nA through P- or N-MOS with W/L ratio of 10µm/12µm. X-FAB 0.60 µm XT06 5V Bias IP cell abiac01 included in Analog Library A_CELLS_5V General purpose low-current bias cell. The circuit forces a current of 200nA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/12µm. X-FAB 0.60 µm XB06 5V Bias IP cell abiac01 included in Analog Library A_CELLS_5V Bias voltage source for pmos and nmos transistors. X-FAB 350 nm XH035 3.3V Bias IP cell abiac01 included in Analog Library A_CELLS_3V3 General purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ration of 6µm/6µm. X-FAB 180 nm XS018 3.3V Bias IP cell abiac01_3v3 included in Analog Library and A_CELLS_3V3 General purpose bias cell. The circuit force a current of 200nA to flow through PMOS with W/L ratio of 8µm/10µm and NMOS with W/L ratio of 4µm/20µm. X-FAB 180 nm XP018 5V Bias IP cell abiac01_5v included in Analog Library A_CELLS_5V General purpose bias cell.The circuit forces a current of ~2µA to flow through PMOS with W/L ratio of 10µm/6µm and NMOS with W/L ratio of 10µm/12µm. X-FAB 180 nm XT018 5V Bias IP cell abiac01_5v included in Analog Library A_CELLS_5V IPTAT bias cell. It forces a current of 2µA to flow through PMOS with W/L ratio of 12µm/6µm and NMOS with W/L ratio of 10µm/12µm X-FAB 1.00 µm XDH10 5V Bias IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 2µA to flow through PMOS with W/L ratio of 10µm/8µm and NMOS with W/L ratio of 10µm/12µm. X-FAB 1.00 µm XDM10 5V Bias IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 2µA to flow through PMOS with W/L ratio of 10µm/8µm and NMOS with W/L ratio of 10µm/12µm. X-FAB 350 nm XH035 3.3V Bias IP cell abiac02 included in Analog Library A_CELLS_3V3 General purpose VTH-based bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ratio of 6µm/6µm. X-FAB 0.60 µm XC06 5V Bias IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of apprx. 2µA through P- or N-MOS with W/L ratio of 10µm/10µm. X-FAB 0.60 µm XT06 5V Bias IP cell abiac02 included in Analog Library A_CELLS_5V General purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm. X-FAB 0.60 µm XB06 5V Bias IP cell abiac02 included in Analog Library A_CELLS_5V Bias voltage source for pmos and nmos transistors. X-FAB 180 nm XS018 3.3V Bias IP cell abiac02_3v3 included in Analog Library and A_CELLS_3V3 General purpose bias cell. The circuit force a current of 2µA to flow through PMOS with W/L ratio of 10µm/4µm and NMOS with W/L ratio of 6µm/12µm. X-FAB 180 nm XP018 5V Bias IP cell abiac02_5v included in Analog Library A_CELLS_5V General purpose bias cell.The circuit forces a current of ~10µA to flow through PMOS with W/L ratio of 2x12µm/3µm and NMOS with W/L ratio of 2x5µm/4µm. X-FAB 0.60 µm XT06 5V Bias IP cell abiac03 included in Analog Library A_CELLS_5V General purpose bias cell. The circuit forces a current of10µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/6µm. X-FAB 350 nm XH035 3.3V Bias IP cell abiac03 included in Analog Library A_CELLS_3V3 General purpose weak inversion bias cell. The circuit forces a current of 200nA (approx.) to flow through PMOS with W/L ratio of 6µm/12µm and NMOS with W/L ratio of 6µm/20µm. X-FAB 0.60 µm XC06 5V Bias IP cell abiac03 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of apprx. 10µA through P- or N-MOS with W/L ratio of 10µm/6µm. X-FAB 0.60 µm XB06 5V Bias IP cell abiac03 included in Analog Library A_CELLS_5V Bias voltage source for pmos and nmos transistors. X-FAB 180 nm XS018 3.3V Bias IP cell abiac03_3v3 included in Analog Library and A_CELLS_3V3 General purpose bias cell. The circuit force a current of 10µA to flow through PMOS with W/L ratio of 2*12µm/2µm and NMOS with W/L ratio of 14µm/6µm. X-FAB 1.00 µm XDH10 5V Bias IP cell abiac04 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 10µA to flow through PMOS with W/L ratio of 12µm/4µm and NMOS with W/L ratio of 12µm/6µm. X-FAB 350 nm XH035 12V Bias IP cell abiac04 included in Analog Library A_CELLS_HV High voltage bias cell. The circuit forces a current of 2µA (approx.) to flow through PHV with W/L ratio of 8µm/12µm and NHV with W/L ratio of 8µm/14µm. X-FAB 1.00 µm XDM10 5V Bias IP cell abiac04 included in Analog Library A_CELLS_5V General purpose bias cell. It forces a current of 10µA to flow through PMOS with W/L ratio of 12µm/4µm and NMOS with W/L ratio of 12µm/6µm. X-FAB 