0.6 Micron Modular Trench Isolated SOI CMOS Technology

Logic

Analog M/S

Trench SOI

High Voltage

 

The XT06 Series complements X-FAB's 0.6 micrometer Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers, which allows unrestricted 60 V high and low side operation of all devices. The process offers reduced parasitics which results in smaller crosstalk, reduced noise and better EMC characteristics. XT06 thus allows innovative circuit design with reduced circuit complexity. CMOS as well as bipolar transistors are available with breakdown voltages of up to 110 V. The 5 V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 μm CMOS processes. For analog applications, several capacitor and resistor devices can be realized using the double poly architecture.

 
 

XT06 info- and datasheet downloads

XT06 Info sheet

XT06 Data sheet

 
 

Available Modules

Trench SOI 0.6µm CMOS Core Module (1P2M)

ESD Implant Module

Mid-oxide Module

Medium Voltage PMOS Module

Extended Medium Voltage NMOS Module

Medium/high Voltage Depeltion NMOS Module

High Voltage Module

Extended High Voltage Module

Extended High Voltage PMOS Module

Double Poly Capacitor/(high resistor/low T.C.) Resistor Module

Linear Capacitor Module

Optical Window Module

3 Metals Layer Module

Thick Third Metal Module

Polyimide Module