0.18 Micron Modular Trench Isolated SOI CMOS Technology
Logic
Analog M/S
Trench SOI
High Voltage
The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length process, integrated with high voltage and Non-Volatile-Memory modules, the platform is specifically designed for a new generation of cost-effective "Super Smart Power" technology; offering up to 200V MOS capability and; operating in temperature range of -40 to 175 °C.
The platform is ideal for consumer, medical, telecommunication infrastructure and industrial applications that need bidirectional isolation, such as PoE applications, ultrasound transmitter drivers, piezo actuators and capacitive-driven micromechanics.
Available Modules
Trench SOI 0.18µm CMOS low-power 1.8/5.0V, or 5.0V only core module (1P2M)
Option to block deep P-well
Deep N-well Module
1X super-junction NDMOS module
1X super-junction PDMOS module
N-buried module
Special high resistance polysilicon module
Single MIM capacitor module
Single high capacitance MIM capacitor Module
Double high capacitance MIM capacitor module
Triple high capacitance MIM module
3-metal module
4-metal module
5-metal module
Top metal module
Thick metal module
Handle wafer contact module
Deep trench isolation module
Polyimide Module
