0.18 Micron Modular Trench Isolated SOI CMOS Technology

The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length process, integrated with high voltage and Non-Volatile-Memory modules, the platform is specifically designed for a new generation of cost-effective "Super Smart Power" technology; offering up to 200V MOS capability and; operating in temperature range of -40 to 175 °C.

The platform is ideal for consumer, medical, telecommunication infrastructure and industrial applications that need bidirectional isolation, such as PoE applications, ultrasound transmitter drivers, piezo actuators and capacitive-driven micromechanics.


XT018 data sheet download

XT018 Data sheet


Available Modules

  • Trench SOI 0.18µm CMOS low-power 1.8/5.0V, or 5.0V only core module (1P2M)
  • Option to block deep P-well
  • Deep P-well Module
  • Deep N-well Module
  • 1X super-junction NDMOS module
  • 1X super-junction PDMOS module
  • DNC module
  • DPC module
  • N-buried module
  • Sub block module
  • Special high resistance polysilicon module
  • Medium resistance polysilicon module
  • Single, double, triple MIM capacitor module
  • Single, double, triple high capacitance MIM capacitor module
  • 3-metal module
  • 4-metal module
  • 5-metal module
  • Top metal module
  • Thick metal module
  • Handle wafer contact module
  • Deep trench isolation module
  • Polyimide Module