New Modules in 0.6 µm BiCMOS Technology
X-FAB now offers five new options for its 0.6 micrometer BiCMOS technology platform, two of which deliver first-of-a-kind capabilities for the emerging and rapidly expanding optoelectronics market. The technology advancements include an innovative and cost-efficient Light Shield module that enables better protection of light-sensitive areas on a chip; and a new, sophisticated Blue pin module with especially high light sensitivity. In addition, X-FAB offers a new Field Effect Transistor (FET) module for low-noise applications, a new polyimide option for compensation of mechanical stress, and Schottky diodes with enhanced forward current capabilities.
Blue PIN Photo Diode [PINBLUE]
- optimized for blue light (405nm)
- high light sensitivity from 600nm to 800nm
- high bandwidth, low dark current
For more information, please click here.
SCHOTTKY diode with improved forward characteristics
- High current capability in forwarding mode
- Low leakage current
For more information, please click here.
Junction Field Effect Transistor [JFET]
- JFET implant
- Used for circular n-channel junction JFET
For more information, please click here.
Polyimide
- resilient barrier layer on top of passivation
- wafer overcoat for stress relief and passivation protection
- reduces risk of delamination
For more information, please click here.
