0.35 Micron Modular Mixed Signal Technology with High Voltage Extensions
Logic
Analog M/S
NVM
High Voltage
BCD
Opto
RF
The XH035 series is X-FAB's 0.35 micrometer Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for industrial, automotive and telecommunication products. Based on a single poly triple metal 0.35 μm drawn gate length process for digital applications, it features core and process modules such as low Vt, low leakage, embedded non-volatile memory and high voltage options, as well as standard or thick fourth layer of metal, double poly and MIM capacitors and high resistance polysilicon. MOS and bipolar transistors are also available.
The 3.3 V CMOS cores are compatible in design rules and transistor performance with state-of-the-art 0.35 μm CMOS processes.
Available Modules
Standard, Low Threshold or Low Leakage 3.3V or Standard 5V Core Module (1P3M)
Mid Gate Oxide Module
Isolated MOS Module
Thick Gate Oxide Module
Medium Voltage NMOS Module
Medium Voltage PMOS Module
Depletion NMOS Module
Buried N Module
Double Polysilicon Capacitor Module
Low Resistance Polysilicon Module
High Resistivity Polysilicon Module
Very High Resistivity Polysilicon Module
EEPROM Module
Single or Double MIM Capacitor Module
2 Metals Layer Module
4 Metals Layer Module
Thick Top Metal Module
