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XT06 abiac02 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm.

XT06 abiac03 is a general purpose biac cell. The circuit forces a current of10µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/6µm.

XT06 abiac05 is a general purpose VTH - based bias cell, a cheaper substitute for abiac02. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm.

XT06 abiac06 is a general purpose V_TH - based bias cell, a cheaper substitute for abiac03. The circuit forces a current of 10µA (approx.) to flow through P- or N- MOS with W/L ration of 10µm/6µm.

XH018 LP3MOS 1.8V abiac06_1v8 is a general purpose low voltage (down to 1.2V) bias cell. The circuit forces a current of 2µA (approx.) to flow through N-MOS with W/L ratio of 20µm/8µm.

XH018 LP3MOS 1.8Vabiac08_1v8 is a general purpose low voltage (down to 1.2V) bias cell. The circuit forces a current of 10µA (approx.) to flow through N-MOS with W/L ratio of 40µm/60µm.

XH018 LP3MOS 3.3V abiac01_3v3 is a general purpose bias cell. the circuit provides bias voltages so that a current of 200nA (approx.) to flow through PMOS with W/L ration of 8µm/10µm and NMOS with W/L ratio of 4µm/20µm.

XH018 LP3MOS 3.3V abiac02_3v3 is a general purpose bias cell. the circuit provides bias voltages so that a current of 2µA (approx.) to flow through PMOS with W/L ration of 10µm/4µm and NMOS with W/L ratio of 6µm/12µm.

XH018 LP3MOS 3.3V abiac03_3v3 is a general purpose bias cell. the circuit provides bias voltages so that a current of 10µA (approx.) to flow through PMOS with W/L ration of 24µm/2µm and NMOS with W/L ratio of 14µm/6µm.

XC10: A_CELLS; A_CELLS_M1. abgpc02 is a bandgap reference with Poly2 resistors. The cell doesn’t include an output buffer.

XC10: A_CELLS; A_CELLS_M1. abgpc01 is a bandgap reference with well resistors.

XC10: A_CELLS; A_CELLS_M1. abgpc03 is a bandgap reference with Poly2 resistors. The cell doesn’t include an output buffer.

XB06: A_CELLS. abgpc01 is a Brokaw, general-purpose bandgap reference source with high resistive poly resistor. 

XB06: A_CELLS. abgpc03 is a badgap reference with high resistive poly resistor.

XC06: A_CELLS. abgpc01 is a general purpose bandgap reference with N-well resistors. This bandgap cell also provides reference voltage for some bias cells.

XC06: A_CELLS. abgpc02 is a general purpose bandgap reference with Poly0 resistors. This bandgap cell also provides reference voltage for some bias cells.

XC06: A_CELLS. abgppc03 is a low-power bandgap reference with Poly0 resistors.

XH035: A_CELLS. For MOS module only. abgpc01 is a general purpose bandgap reference with N-well resistors.

XH035: A_CELLS. For MOS module only. abgpc02 is a general purpose bandgap reference with Poly2 resistors.

XH035: A_CELLS. For MOS module only. abgpc04 is a general purpose bandgap reference with Poly2 resistors.

XH035: A_CELLS. For MOS module only. abgpc07 is a low-supply voltage bandgap reference with N-well resistors. The cell features low supply current and low noise.

XT06 abgpc01 i a general purpose bandgap reference with PDIFF resistor in NWELL (rdiffp3). THis bandgap cell also provides reference voltage for some bias cell.

XT06 abgpc02 is a general purpose bandgap reference with high resistive poly0 resistor (rpolyh). This bandgap cell also provides reference voltage for some bias cells.

XT06 abgpc03 is a bandgap reference with low temperature coefficient poly0 resistor (rpoly0).

XT06 

XC018 LP 3.3V abgpc01 is a general purpose low-power bandgap reference with N-well resistors.

XC018 LP 3.3V abgpc02 is a general purpose low-power bandgap reference with rnp1 resistors

XC018 LP 3.3V abgpc03 is a low-voltage bandgap reference with N-well resistors.

XC018 LP 5V abgpc01_5v is a general purpose low-power bandgap reference with N-well resistors. The cell features wide range of supply voltage and operation temperatures, compact size and low power consumption.

XC018 LP 5V abgpc02_5v is a robust low-power bandgap reference with polysilicon resistors. The cell features wide range of supply voltage and operation temperatures, compact size and low power consumption.