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XH035: A_CELLS. For MOS module only. abgpc01 is a general purpose bandgap reference with N-well resistors.

XH035: A_CELLS. For MOS module only. abgpc02 is a general purpose bandgap reference with Poly2 resistors.

XH035: A_CELLS. For MOS module only. abgpc04 is a general purpose bandgap reference with Poly2 resistors.

XH035: A_CELLS. For MOS module only. abgpc07 is a low-supply voltage bandgap reference with N-well resistors. The cell features low supply current and low noise.

XT06 abgpc01 i a general purpose bandgap reference with PDIFF resistor in NWELL (rdiffp3). THis bandgap cell also provides reference voltage for some bias cell.

XT06 abgpc02 is a general purpose bandgap reference with high resistive poly0 resistor (rpolyh). This bandgap cell also provides reference voltage for some bias cells.

XT06 abgpc03 is a bandgap reference with low temperature coefficient poly0 resistor (rpoly0).

XT06 

XC018 LP 3.3V abgpc01 is a general purpose low-power bandgap reference with N-well resistors.

XC018 LP 3.3V abgpc02 is a general purpose low-power bandgap reference with rnp1 resistors

XC018 LP 3.3V abgpc03 is a low-voltage bandgap reference with N-well resistors.

XC018 LP 5V abgpc01_5v is a general purpose low-power bandgap reference with N-well resistors. The cell features wide range of supply voltage and operation temperatures, compact size and low power consumption.

XC018 LP 5V abgpc02_5v is a robust low-power bandgap reference with polysilicon resistors. The cell features wide range of supply voltage and operation temperatures, compact size and low power consumption.

XC018 LP 5V abgpc03_5v is a robust low-voltage bandgap reference with N-well resistors. The cell features wide range of supply voltages and is stable with large capacitive loads.

XC018 LP 5V abgpc04_5v is a robust low-voltage bandgap reference with N-well resistors. The cell features wide range of supply voltage and is stable even with large capacitive loads.

Low Power, Wide Supply Range, CMOS

 XH018 LP3MOS 1.8V abgpc01_1v8 is a general purpose 1.2V bandgap reference with N-well resistirs and PNP (qpvc) diode matrix

XH018 LP3MOS 1.8V abgpc05_1v8 is a general purpose 1.2V bandgap reference with N-well resistors and NPN (qnva) diode matrix.

XH018 LP3MOS 3.3V abgpc01_3v3 is a general purpose bandgap reference with N-well resistors. This bandgap cell also provides reference voltage for some bias cells.

XH018 LP3MOS 3.3V abgpc02_3v3 is a general purpose bandgap reference with polysilicon resistors.

XH018 LP3MOS 3.3V abgpc04_3v3 is a low-voltage bandgap reference with N-well resistors.

XC10: A_CELLS; A_CELLS_M1. abiac01 is a general purpose VTH - based current reference. The circuit forces a current of 2.4μA (approx.) to flow through P- or N-MOS transistor with a W/L ratio of 10μm/6μm.

XC10: A_CELLS; A_CELLS_M1. abiac02 is a general purpose weak inversion bias cell. The circuit forces a current of 250nA (approx.) to flow through P- or N-MOS transistors with a W/L ratio of 10μm/10μm.

XB06: LNA library: RF_BIAS_CELLS. BIAS is a bias cell intended for use with various RF building blocks. It is designed as a bandgap reference as well as voltage-to-current converter. Current biasing is preferable because of the higher immunity to interfer

XB06: A_CELLS. abiac01 is a bias voltage source (VBP1, VBN1) which needs a bandgap cell for biasing.

XB06: A_CELLS. abiac02 is a bias voltage source (VBP2, VBN2) which needs a bandgap cell for biasing.

XB06: A_CELLS. abiac03 is a bias voltage source (VBP3, VBN3) which needs a bandgap cell for biasing.

XC06: A_CELLS_HV. abiac07 is a high-voltage bias cell. The circuit forces a current of 2µA (approx.) to flow through pghv PMOS with W/L ratio of 10µm/10µm and nmv NMOS with W/L ratio of 10µm/12µm.

XC06: A_CELLS_HV. abiac08 is a high-voltage bias cell. THe circuit forces a current of 2µA (approx.) to flow through pgmv PMOS with W/L ratio of 10µm/10µm and nhv NMOS with W/L ratio od 10µm/12µm. The cell features low-cost process option and is a co

XH035: A_CELLS. For MOS module only. abiac01 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ration of 6µm/6µm.