104 entries, filtered by: Paper
Published: February 2012

Moore’s law has been a strong influence on mainstream microelectronics over the past few decades, where the trends of decreasing feature size and increasing transistor count have driven the semiconductor industry forward. This philosophy has worked very well for memories and microprocessors in the digital world. Additional analog functions, by interfacing with the physical world, enable cost-optimized and value-added system solutions.


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Published: February 2012

PIN photodiodes are often used in optical integrated circuits. Although they can feature a very good RF-performance, this can be effected by the optical power density of the incident light. The influence of this effect on the RF-performance of PIN photodiodes is described. When a critical optical power density in the epi-layer is exceeded the 3dB frequencies are cut off. An analytical equation is derived to describe the effect. The results are compared to RF measurements and verified by numerical simulation.


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Published: March 2012

X-FAB, a pure play foundry, has already extensive experience in volume production of monolithic integrated MEMS devices. The idea of combining CMOS and MEMS processes to obtain monolithic integrated sensor solutions is a logical, consequent step following the “More than Moore” strategy.


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Published: December 2011

Looking for new improvement options such as new dispatching rules of an existing semiconductor fabrication facility, a detailed model is indispensable to check the data quality as well as detecting main influences of the facility and finally testing the new optimization approaches. In this paper, the whole way is described starting from the data acquisition and finishing with a appropriate model. In this study the modeling tool AnyLogic 6 is used. The model generation process show how important a reliable factory database is and shows first appendages of automated model generation. An other important fact presented is the verification of the model according to real factory performance indicators.


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Published: December 2011

Based on specific technology flows, various surface layers are bonded by glass frit wafer bonding. In this paper, the behaviour of typical layers, such as TEOS, Nitride and thermal oxide, and their effect on the bonding results are introduced.


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Published: November 2011

The power semiconductor industry has grown steadily in past two decades from $2.7 billion in 1992 and is expected to reach $13.1 billion in annual sales volume this year due to rapid proliferation of power electronics in many fields like telecommunication, automotive, new renewable energy system and energy conversion application. Among power transistor products, sales of modules built with Insulated Gate Bipolar Transistor (IGBT) are expected to increase 10 percent to $2.5 billion this year.
This paper gives an overview to different types of IGBTs available in current market as well as those under development.


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Published: September 2011

Using a trench isolated 650V quasi-vertical n-channel DMOS as a starting point several new 650V transistor types have been evaluated. Mainly by design measures a 650V depletion DMOS, a 650V PMOS and a 650V IGBT were created for a modular integration into the process flow.


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Published: September 2011

This paper presents a simple but effective way to improve an NMOS transistor’s ESD robustness for use in I/O pads. Simulation and physical failure analysis has been performed to identify the source of the ESD failure. Process splits have been performed primarily at LDD (Lightly Doped Drain) implant and salicidation process based on data presented in this paper.


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Published: September 2011

Diodes inherent in a CMOS process are light sensitive and could be exploited as photodetectors. To detect light the photo generated carriers need to be separated by the electrical field of an internal pn junction. They are either generated inside the depletion region or can get there by diffusion. The depth where these carriers are generated depends strongly on the wavelength. The generation profile, the pn junction depth and the diffusion length all impact the spectral sensitivity.


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Published: September 2011

A study on the effect of process fabrication for MIM capacitors analog matching performance was carried out, impacts from the MIM dielectrics, capacitor top and bottom metal materials, capacitor metal etch, wet cleaning, annealing process will be revealed by comparing the Pelgrom coefficients, i.e. the dependence of difference in capacitance of the matching pairs with respect to their corresponding square root of capacitor areas, the smaller the difference the better the matching.


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