30 entries, filtered by: More than Moore
Published: February 2012

Moore’s law has been a strong influence on mainstream microelectronics over the past few decades, where the trends of decreasing feature size and increasing transistor count have driven the semiconductor industry forward. This philosophy has worked very well for memories and microprocessors in the digital world. Additional analog functions, by interfacing with the physical world, enable cost-optimized and value-added system solutions.


More
Published: March 2012

X-FAB, a pure play foundry, has already extensive experience in volume production of monolithic integrated MEMS devices. The idea of combining CMOS and MEMS processes to obtain monolithic integrated sensor solutions is a logical, consequent step following the “More than Moore” strategy.


More
Published: September 2011

Using a trench isolated 650V quasi-vertical n-channel DMOS as a starting point several new 650V transistor types have been evaluated. Mainly by design measures a 650V depletion DMOS, a 650V PMOS and a 650V IGBT were created for a modular integration into the process flow.


More
Published: September 2011

Diodes inherent in a CMOS process are light sensitive and could be exploited as photodetectors. To detect light the photo generated carriers need to be separated by the electrical field of an internal pn junction. They are either generated inside the depletion region or can get there by diffusion. The depth where these carriers are generated depends strongly on the wavelength. The generation profile, the pn junction depth and the diffusion length all impact the spectral sensitivity.


More
Published: July 2011

An enhancement-mode Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been developed in 0.13μm technology platform. The single-transistor (1-T) SONOS device in NOR Flash memory array utilizes n-channel cells. The development of 1-T SONOS is not an easy feat due to many disturbs experienced by the cells during operation.


More
Published: June 2011

Photo detector integrated circuits (PDIC) require high-sensitivity and high-bandwidth photo diodes for the latest generation of Blu-ray data storage devices. Due to the very short 405nm wavelength used, carriers are generated close to the surface. Standard photo diodes have only a low sensitivity for blue light. Therefore, special adapted photo diodes are necessary to support sensitivity higher than 0.25A/W for a 405nm wavelength.


More
Published: June 2011

In this paper, micromachined acceleration sensors as ready-to-use Intellectual-Property-Blocks (IP-Blocks) are introduced. These standard elements are available for a special surface micromachining foundry technology. They are ready to use, characterized and qualified design elements, which can be customized by changing the peripheral elements such as bond pads, and allow the fast prototyping and production start of high-performance inertial sensors.


More
Published: May 2011

In this paper we present a modular trench isolated high voltage SOI process with the possibility to integrate various types of high voltage transistors. The integration of these additional 650 V devices takes place in a modular approach which allows a high process flexibility to support different applications with a minimum number of additional or changed process steps.


More
Published: April 2011

Silicon photodiode integrated with CMOS has been in extensive study for the past ten years due to its wide use in applications such as short-distance communication, VCD players, ambient light sensors and many other intelligent systems. In recent years, high speed blue-ray DVD is replacing conventional DVD due to its larger storage capacity and higher speed. In this work, the photodiode optimized for blue ray is fully integrated with standard 0.35um CMOS process and the bandwidth dependency upon thermal process and epitaxial material is investigated.


More
Published: January 2011

Miniaturized video endoscopes with an imager located at the distal end and a simplified opto-mechanical layout are presented. They are based on a CMOS imager with 650 x 650 pixels of 2.8 μm pitch and provide straight view with 75° and 110° field of view at f/4.3. They have an outer diameter of 3 mm including the shell and a length of approx. 8 mm. The optics consist of polymer lenses in combination with a GRIN and a dispensed lens. Using a simple flip chip assembly, optical axis alignment better than 10 μm and a contrast of 30 % at 90 LP/mm was achieved. The 75° FOV system was sealed at the front window using a solderjetting technology, providing 10-9 mbar*l/s leakage rates even after several autoclave cycles.


More