7 entries, filtered by: IGBT
Published: May 2012

XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 110V net supply. The typical breakdown voltage of the HV-DMOS devices is >350 V or >275V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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Published: July 2013

XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 220V net supply. The typical breakdown voltage of the HV DMOS devices is >350V or >650V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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Published: April 2002

The adjustment of emitter efficiency by variation of doping profiles or application of lifetime control techniques such as irradiation of electrons and helium are two generally recognized concepts for the improvement of power device characteristics. In this work both concepts were studied by use of device simulation for the development of an IGBT and freewheeling diode chipset for 3.3kV.


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Published: May 2011

In this paper we present a modular trench isolated high voltage SOI process with the possibility to integrate various types of high voltage transistors. The integration of these additional 650 V devices takes place in a modular approach which allows a high process flexibility to support different applications with a minimum number of additional or changed process steps.


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Published: September 2011

Using a trench isolated 650V quasi-vertical n-channel DMOS as a starting point several new 650V transistor types have been evaluated. Mainly by design measures a 650V depletion DMOS, a 650V PMOS and a 650V IGBT were created for a modular integration into the process flow.


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Published: November 2011

The power semiconductor industry has grown steadily in past two decades from $2.7 billion in 1992 and is expected to reach $13.1 billion in annual sales volume this year due to rapid proliferation of power electronics in many fields like telecommunication, automotive, new renewable energy system and energy conversion application. Among power transistor products, sales of modules built with Insulated Gate Bipolar Transistor (IGBT) are expected to increase 10 percent to $2.5 billion this year.
This paper gives an overview to different types of IGBTs available in current market as well as those under development.


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Published: April 2012

The huge demand for high voltage, high current power devices on Silicon on Chip (SoC) has led to the development of Lateral IGBT (LIGBT), touted as the best candidate to serve these two purposes. This paper is the first to review the research works on LIGBTs published till now. The LIGBTs are categorized into four types based on different technologies applied, mainly Junction Isolation (JI), Silicon On Insulator (SOI), Partial SOI (PSOI) and Membrane, and ten varieties based on their device mechanisms, such as Reverse Conducting, Trench Gate and Super Junction.


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