34 entries, filtered by: Reliability
Published: October 2005

In this paper a non-destructive test structure for monitoring the strength of anodic bonded glass silicon wafer compounds is introduced. The realisation of the structure, the calculation of the surface energy using FEM and practical results are shown.


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Published: March 2006

The feasibility of EEPROM memories in SOI process technologies has been proven. It has also been shown that known data retention problems at high temperatures caused by leakage currents can be solved without extra circuitry. In this paper results of EEPROM cell matrix measurements regarding functionality and reliability will be presented. Different cell designs will be compared. Furthermore, a 32x16 bit EEPROM prototype and memory test results will be shown.


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Published: April 2006

In the paper new testing methods for MEMS will be presented that can be applied on wafer level in early stage of the manufacturing process. First measurements of the eigenfrequencies test specimen were done. A Finite Element model was created to determine the plate thickness for the measured eigenfrequencies. There is a good agreement between the microscopic determined real thicknesses and the calculated thicknesses. Also a stochastic model was created to describe the influence of different parameters on the calculated thickness of membrane.


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Published: December 2007

Ultra low leakage is considered as a major requirement for most of the common device performance. Larger circuit design size, device threshold voltage scaling, and device dimension shrinkage are causing this dramatically increase in leakage current. This significant increment of leakage with each technology generation warrants that it to be considered as the key challenge in IC design.


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Published: December 2007

Today three different main failure mechanisms in metallization are well known. Defect behaviour in reliability stress tests of metallization are influenced by electromigration (current), stress migration (mechanical) and thermomigration (temperature) effects. In this study, stress migration effects were evaluated using high temperature storage test and resistance measurements over time.


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Published: December 2007

Ultra low power device requires extremely low level of CMOS standby current leakage. At 0.15um geometric technology, wafer edge leakage current is more severe yield issue and it was suspected from inter metal dielectric thickness and contact module process uniformity. Investigation has been made and our studies have been carried out on process optimization of contact module which are including contact etch tools performance, contact stopper materials, thickness and contact etch time. By implementing the optimized condition, we are able to reduce standby leakage current on wafer edge dice about 5 times reduction.


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Published: May 2008

The long term isolation properties of deep trenches in thick SOI have been investigated by current-voltage characteristics. A strong change of the measured trench leakage current was observed depending on the applied voltage. Further on a marked decrease of the leakage current was observed depending on the duration and polarity of the applied stress.


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Published: July 2008

Experimental condition of thin SAB Oxide around 350Å coupling with 400Å Contact SiON film has exhibited the worst data retention behavior in One Time Programmable (OTP) & Multiple Time Programmable (MTP) memory device.


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Published: July 2008

Hot carriers, the high kinetic energy carriers due to high electric field in the channel region, are injected into the gate oxide and form interface states, which in turns causes degradation of MOS device performance. The hot carrier effect has become more severe as the device size continues to scale down to submicron range. This aging phenomenon that threatens the circuit and product lifetimes warrants it to be considered as the key challenge in reliability.


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Published: July 2008

With the further scaling down of CMOS devices, hot carrier induced degradation has become one of the most important reliability concerns. In the hot carrier effect, carriers are accelerated by the channel electric fields and become trapped in the oxide. These trapped charges cause time dependent shifts in measured device parameters.


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