18 entries, filtered by: Datasheet
Published: February 2011

The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Telecommunication and Automotive products - including the 42V board net.
Based on a state of the art single poly double metal 0.8-micron drawn gate length N-well process for digital application, various process modules are available for high performance analogue and high voltage circuits.


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Published: December 2010

The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Automotive and Telecommunication products.
Based on a state of the art single poly double metal 0.6-micron drawn gate length N-well process for digital application, process modules are available for triple metal and double poly high performance analogue circuits.


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Published: August 2010

The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS (BCD) Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power management, RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.


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Published: January 2009

The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.


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Published: August 2008

The XC018 series is X-FAB’s 0.18 micron Modular Logic and Mixed Signal Technology. The platfrom is ideal for SOC application. Main target applications are standard cell, semi-custom and full custom designs for Automotive, Consumer, Industrial as well as Telecommunication products, while the low power and high voltage process is ideal for mobile applications as well as display drivers or controllers. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate oxide (1.8V with 3.3V or 5.0V) transistors.


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Published: July 2008

The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Automotive, Consumer, Industrial and Telecommunication products. The process enables mixed-signal systems on one chip by its nonvolatile memory and sensor integration capabilities.
Based on a state of the art very cost effective single poly single metal 1.0-micron minimum feature size N-well process for mixed-signal and high voltage applications, various process modules are available for high performance analog and high voltage circuits. Using the non-volatile memory modules integration of EEPROM, OTP or NV latches is possible.
Technology variants for integrated MEMS are available.


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Published: July 2008

The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options. EEPROM blocks up to 32 kbit as well as Flash memories up to 512 kbit can be integrated in standard cell, semi-custom and full custom designs for Industrial, Automotive and Telecommunication products.
MOS as well as Bipolar Transistors are available with Breakdown Voltages up to 100V. The 5 V CMOS core is compatible in Design Rules and Transistor Performance with state of the art 0.6 μm CMOS Processes.
For analog applications several capacitor and resistor devices are realized, using the Double-Poly-Non-Volatile-Memory architecture.


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Published: June 2008

The FC025 series is X-FAB’s 0.25-micron Modular Logic and Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for consumer and communication products. Based upon an industry standard single poly with up to five metal layers 0.25-micron drawn gate length N-well process, modules are available for five layers of metal, double poly/metal capacitors, high resistive poly and dual gate oxide (5V) transistors.


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