14 entries, filtered by: Simulation
Published: May 2008

The long term isolation properties of deep trenches in thick SOI have been investigated by current-voltage characteristics. A strong change of the measured trench leakage current was observed depending on the applied voltage. Further on a marked decrease of the leakage current was observed depending on the duration and polarity of the applied stress.


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Published: December 2007

To fulfill the current market demand of smart power IC’s an attempt was made to incorporate the high voltage devices in the current baseline of 0.18 micron low voltage process. Circular high voltage structure proposes for some advantages such as higher breakdown voltage, lower leakage current, less area and etc over the normal structure. The NMOS & PMOS both types of transistors are optimized in terms of their structure and process condition to achieve large breakdown voltage with lower Ron value.


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Published: April 2006

A wafer-level testing method is investigated for an early stage of the manufacturing process applied to accelerometers. The approach consists of performing optical measurement of the modal responses of the MEMS structures, and uses this information in an inverse identification algorithm based on a FE model.


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Published: September 2005

During the evolution of RF bipolar transistors, much efforts were spent to optimize the base design. Device engineers came up with concepts like graded dopant profiles, SiGe and SiGe:C base layers, elevated base structures, etc. Regarding the collector, selectively implanted collectors (SIC) were introduced to increase both the cutoff frequency ft and the maximum frequency of oscillation fmax. In this work we focus on the collector-emitter breakdown voltage BVCE0 and its relation to ft for differently designed SICs of Si-based RF bipolar transistors.


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