The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Automotive and Telecommunication products. Based on a single poly, triple metal 0.35-micron drawn gate length process for digital applications, process modules are available such as embedded Non-Volatile Memory, high voltage options, as well as standard or thick fourth layer metal, double-poly and MIM capacitor and high resistance polysilicon.
What happens when optical signals are converted to electrical signals? Focusing on the optical to electrical conversion process, this webinar sheds some light on the basics of light interaction from reflection, transmission, polarization and refraction to absorption with semiconductors devices. It explores electrical fields, recombination and lifetime, doping profiles, band structures and pn-junctions to determine what happens when light has been converted into electron-hole pairs. This webinar provides a solid overview of passive and active optical sensor elements manufactured in a mixed-signal CMOS process or added during post processing
The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.
This paper demonstrates a novel lateral superjunction (SJ) lateral insulated gate bipolar transistor (LIGBT) fabricated in 0.18μm partial silicon on insulator (PSOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations.
The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, integrated with high voltage and Non-Volatile-Memory modules, the platform is engineered for applications needing an integrated solution and cost efficient process for high performance analog ICs. Targeted applications are switching applications, lighting, display, etc; operating in temperature range of -40 to 175 °C.
We present a method for producing monolithically integrated CMOS optical filters with different and customerspecific responses. The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.
The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.
Are you challenged with having to design a device that requires bidirectional isolation and has several voltage levels integrated on a single chip without latch-up? If that is the case, you should join our upcoming webinar introducing XT018, the world’s first trench-isolated SOI (silicon on insulator) foundry technology offering for 200V MOS capability at 180nm. The presentation covers the general benefits and trade-offs of using SOI technology vs. a silicon bulk process. It highlights features such as super-junction architecture for 100V to 200V devices with complete dielectric isolation, the possibility to apply defined handle wafer potentials, and a highly flexible modular approach for selecting specific technology features that meet your exact needs.
This Inter-poly Oxide-Nitride-Oxide (ONO) dielectric film has been widely used as dielectric films in stacked gate Flash memory devices. The ONO dielectric film plays an important role in ensuring good reliability in flash memory devices. In this paper, the characteristics of ONO dielectric films have been analyzed.
In this paper, optimization and physical scaling of the SONOS ONO triple layer are extensively evaluated, with detailed characterization of the Flash cell behavior. Reliability tests have demonstrated high temperature endurance and long-term data retention. The results have shown that the reliability requirement is attainable even with down scaling of the vertical component of the oxynitride charge trapping layer, which makes it feasible to operate the cell at a lower programming voltage.