The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Automotive and Telecommunication products. Based on a single poly, triple metal 0.35-micron drawn gate length process for digital applications, process modules are available such as embedded Non-Volatile Memory, high voltage options, as well as standard or thick fourth layer metal, double-poly and MIM capacitor and high resistance polysilicon.
The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.
IC content in cars has been growing exponentially, adding significant complexity to automotive chip design and manufacturing. Today’s cars feature many semiconductor applications such as tire pressure monitoring sensors and accelerometers for airbag systems. Add electronic components to improve engine performance, increase fuel efficiency, control modern entertainment and communications devices, provide Internet capability and handle new comfort functions... Now add the challenge of making the associated ICs survive for many years in extreme heat and cold, rain and snow, salt, g-forces, humidity, dry and dusty conditions...and you’ve got your hands full designing for one of the most harsh IC operating environments.
XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing sensitive high bandwidth photo diodes arrays or CMOS image sensors for such applications as optical data storage, optical data communication or high dynamic range cameras.
The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS (BCD) Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power management, RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.
The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.
Using silicon-based MEMS technologies, the cost-efficient production of gyroscopes has become possible in recent years. As a result, gyroscopes are entering new markets, such as for highly accurate GPS-Instruments where the gyroscope enhances accuracy in situations where satellite reception is lost, for example in tunnels. However, since all gyroscopes are very precise resonating measurement devices, this leads to stringent wafer processing requirements for their production.
A new smart power SOC IC process including up to 50V HV-MOS transistors, SONOS principle based non-volatile memory components and analog devices using an advanced 0.18μm platform is presented. Process architecture and device portfolio are focused on automotive applications e.g. sensor signal conditioning and integrated output drivers. HV-MOS and SONOS integration as well as device properties are discussed with regard to reliability aspects. Additionally key features of NPN bipolar transistors and depletion NMOST are given.