4 entries, filtered by: BCD
Published: September 2013

Showing first-time-right performance statistics from X-FAB's customer base, this first session outlines the challenges involved in achieving first-time-right analog designs. It talks about what impact the choice of process architecture makes, and discusses the pros and cons of different process architectures including SOI and BCD.


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Published: July 2013

XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 220V net supply. The typical breakdown voltage of the HV DMOS devices is >350V or >650V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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Published: May 2013

This paper presents versatile HV lateral JFET design method on 0.18μm SOI BCD technology to achieve variable Vth(pinch-off voltage) and Idsat, without DIBL effect over full operating Vds range and scalable breakdown voltage capability on both N-ch and P-ch JFET. The significant advantage of a HV JFET compared to depletion MOSFET is the lower area consumption in real circuit design which due to higher Idsat values at Vgs=0V.


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Published: May 2012

XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for applications using 110V net supply. The typical breakdown voltage of the HV-DMOS devices is >350 V or >275V. The modular process combines DMOS, bipolar and CMOS processing steps that are compatible with dielectric insulation to provide a wide variety of MOS and bipolar devices with different voltage levels within a dielectric bi-directional high voltage trench insulation on the same die.


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