31 entries, filtered by: Analog
Published: November 2013

The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and full  custom designs for Industrial, Automotive and Telecommunication products. Based on a single poly, triple metal 0.35-micron drawn gate length process for digital applications, process modules are available such as embedded Non-Volatile Memory, high voltage options, as well as standard or thick fourth layer metal, double-poly and MIM capacitor and high resistance polysilicon.


More
Published: October 2013

Is there magic that makes analog designs successful? How can designs achieve ESD (electro-static discharge) specifications? Do DFM methods make designs more robust? This webinar answers these questions and provides tips & tricks for analog design.


More
Published: October 2013

This webinar session provides guidance through the EDA environment and describes the interaction among EDA tools, design methodology and PDKs to optimize the design process. It uses selected reference flows and best practice examples for critical components during the design phase.


More
Published: May 2013

The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, integrated with high voltage and Non-Volatile-Memory modules, the platform is engineered for applications needing an integrated solution and cost efficient process for high performance analog ICs. Targeted applications are switching applications, lighting, display, etc; operating in temperature range of -40 to 175 °C.


More
Published: December 2012

The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.


More
Published: June 2012

The XU035 series is X-FAB’s 0.35-micrometer Modular 700V Ultra-High-Voltage (UHV) Technology. Based upon the standard 1P3M process with single 5V gate oxide, 0.35-micron drawn gate length and metal design rules, the platform is engineered for applications needing an integrated power and startup device solution.


More
Published: September 2011

A study on the effect of process fabrication for MIM capacitors analog matching performance was carried out, impacts from the MIM dielectrics, capacitor top and bottom metal materials, capacitor metal etch, wet cleaning, annealing process will be revealed by comparing the Pelgrom coefficients, i.e. the dependence of difference in capacitance of the matching pairs with respect to their corresponding square root of capacitor areas, the smaller the difference the better the matching.


More
Published: June 2011

XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing sensitive high bandwidth photo diodes arrays or CMOS image sensors for such applications as optical data storage, optical data communication or high dynamic range cameras.


More
Published: April 2011

The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology.
XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation of all devices. The process offers reduced parasitics which results in smaller crosstalk, reduced noise and better EMC characteristics. Thus XT06 allows innovative circuit design with reduced circuit complexity. CMOS as well as Bipolar Transistors are available with breakdown voltages up to 110V.
The 5 V CMOS core is compatible in design rules and transistor performance with state of the art 0.6μm CMOS processes.
For analog applications several capacitor and resistor devices are realized, using the double-poly architecture.


More
Published: March 2011

A study has been carried out to improve metal-insulator-metal (MIM) capacitor's capacitance density and linearity performance. The scopes of the study included single MiM and stack MIM structures. Different dielectric schemes were evaluated with their corresponding capacitance density, breakdown voltages and linearity coefficient to voltage and temperature variation etc. characterised.


More