116 entries
Published: February 2011

The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Telecommunication and Automotive products - including the 42V board net.
Based on a state of the art single poly double metal 0.8-micron drawn gate length N-well process for digital application, various process modules are available for high performance analogue and high voltage circuits.


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Published: January 2011

Visualization is still the most important tool in medical diagnostics to allow for the physician, in combination with their medical knowledge, to detect diseases within the human body and choose healing treatments in order to enable recovery. For minimal invasive surgical operations that use endoscopic tools, imaging camera modules that have both a small volume and a good resolution are necessary to ensure the success of the surgical treatment.
Microsystem technologies now allow for the direct integration of imaging optics and sensors in a system.


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Published: January 2011

Miniaturized video endoscopes with an imager located at the distal end and a simplified opto-mechanical layout are presented. They are based on a CMOS imager with 650 x 650 pixels of 2.8 μm pitch and provide straight view with 75° and 110° field of view at f/4.3. They have an outer diameter of 3 mm including the shell and a length of approx. 8 mm. The optics consist of polymer lenses in combination with a GRIN and a dispensed lens. Using a simple flip chip assembly, optical axis alignment better than 10 μm and a contrast of 30 % at 90 LP/mm was achieved. The 75° FOV system was sealed at the front window using a solderjetting technology, providing 10-9 mbar*l/s leakage rates even after several autoclave cycles.


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Published: December 2010

The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Automotive and Telecommunication products.
Based on a state of the art single poly double metal 0.6-micron drawn gate length N-well process for digital application, process modules are available for triple metal and double poly high performance analogue circuits.


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Published: November 2010

This paper suggests an improved method to round off the concave corners of the deep trenches formed by plasma etch. The corner rounding technique, sacrificial oxidation (SACOX) before gate oxidation, has been practiced on the shallow trench isolation (STI) to improve the CMOS leakage performance.


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Published: August 2010

The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS (BCD) Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power management, RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.


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Published: July 2010

A novel 0.18μm 200V integrated technology based on Partial SOI and lateral Super Junctions devices is presented. The dielectric isolation inherent in SOI allows simple and areaefficient integration of electrically floating CMOS and HV devices while removing all substrate carrier injection-related parasitic effects. The Super Junctions give a competitively low on-resistance of HVMOS and provide a wide-range breakdown voltage-scaling capability.


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Published: April 2010

The high voltage device can be embedded into conventional shallow trench isolation (STI) logic process. Basically, SVX (Smart Voltage Extension) technique was applied in order to integrate 32V high voltage LDMOS into a standard 0.18 micron low voltage CMOS technology without any process change. However, a double hump issue was being observed in high voltage LDNMOS. The double hump phenomenon is mainly occurs due to lower threshold voltage of transistor corner that will lead to high sub-threshold leakage. This paper presents a solution by applying boron implant in HV LDNMOS to suppress the double hump issue. The retrograde baseline CMOS p-well implant is used for this purpose to avoid an additional mask and process step.


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Published: April 2010

An experiment in base and pedestal collector implant has been conducted to study the impact and further improve the performance of a 0.6 micron silicon poly emitter bipolar transistor. It has been shown the bandwidth can be improved form 13GHz to 15GHz with acceptable changes to the other bipolar performances.


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Published: March 2010

For the first time, this paper demonstrates the experimental results for two types of test structures of field transistors up to 200°C. The field transistor structures which are stripe (conventional) and square ring (new) structures were measured and investigated in term of field leakage current and onstate characterization at high temperature.


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