X-FAB Sarawak Set to Begin Volume Production of 0.35 Micrometer Analog/Mixed-Signal High-Voltage TechnologyErfurt, Germany, September 3, 2008.
X-FAB Silicon Foundries, the world's leading foundry for the production of analog/digital integrated circuits, today announced that its Malaysian facility in Kuching, Sarawak, Malaysia – with its modern 200 mm production line – now is fully qualified for volume production and second sourcing of the company’s 0.35 micrometer high-voltage process technology called XH035. This process technology is ideal for a wide variety of applications including RF and power management, low-power and high-precision mixed-signal circuits, analog front-ends for sensors, mixed-signal embedded systems, systems-on-chip (SoCs) and automotive applications.
The flexible XH035 CMOS technology can be expanded easily with a full range of add-on modules including three- and four-layer metallization, a second gate-oxide for transistors with varying breakdown voltages of up to 50 Volts, well isolated 3.3 and 5-Volt transistors, and EEPROM storage blocks. Full front- and back-end modularity creates a lean process flow and optimizes the number of mask layers. The process also meets the rigorous AEC-Q100 standard for automotive applications.
The XH035 process comes with a large variety of active and passive devices to address analog/mixed-signal design needs. These devices include high-voltage NMOS, PMOS and DMOS transistors, double-poly and MIM capacitors, high-ohmic and low-TC resistors. In addition, the process offers excellent matching, low on-resistance high-voltage devices and embedded NVM options. It also features a variety of dense standard cell libraries optimized for area, speed, low power or low noise; and I/O libraries, including ESD support and numerous verified analog IP libraries.
In addition, RF CMOS building block extensions are available for applications up to 2.4 GHz, for Bluetooth, WLAN and ISM transmitters/receivers.
The next process extension, already in the Conditional Release development phase, will offer a very compact single poly EEPROM cell 30-percent smaller than the current EEPROM, and with two fewer mask layers. Designs and risk production can be started now on this extended process version.