X-FAB Introduces High-Voltage Option and BiCMOS Technology Extensions to 0.35 µm Process

Erfurt, Germany, October 6, 2004.

X-FAB Semiconductor Foundries AG, one of the world's leading analog mixed-signal foundries, announced today at the FSA Suppliers Expo an extension to its modular 0.35 µm process family -- now included are a high-voltage option, as well as 0.35 µm-BiCMOS technology. With this product extension, X-FAB has successfully brought its expertise and renowned experience in mixed-signal technologies to the 0.35 µm platform. The XH035 0.35 µm CMOS technology can be flexibly expanded with virtually a free range of combinable add-on modules, and it fulfills the rigorous demands on supply voltage from industrial, consumer-product and automotive applications. Besides three- and four-layer metallization and a second gate-oxide for transistors with varying breakdown voltages of up to 50 Volts, other features such as well-isolated 3.3-Volt transistors, EEPROM storage cells, and both double-poly and MIM capacitors are all available. Flash storage will also be available in a later version.

The XB035 0.35 µm BiCMOS technology offers, among other things, double-poly and MIM capacitors, three- or four-layer metallization or, alternatively, a thick, fourth metal for inductors. XB035 is especially suited for applications of up to 2.4 GHz, e.g. for Bluetooth, WLAN or ISM transmitters/receivers.

Both technologies will be produced at X-FAB's modern, 200 mm production line at its Plymouth, UK facility.

"In line with industry trends, we are offering highly integrated solutions -- most especially for automotive applications, power-management solutions and intelligent display-driver products -- by expanding the high-voltage and mixed-signal characteristics of our 0.35 µm technology," said Thomas Hartung, VP of Marketing & Sales, X-FAB Group. "Associated design kits that conform to X-FAB's customary standards are available effective immediately."