X-FAB Announces First 200V SOI Foundry TechnologyNEWS, Erfurt, Germany, November 8, 2012.
XT018 Enables Multiple High-Voltage Levels on a Single Chip
X-FAB Silicon Foundries today announced its XT018, the world’s first trench dielectric isolated SOI foundry technology offering for 200V MOS capability at 180nm. Using the full dielectric isolation of this modular process allows blocks at different voltage levels to be integrated on a single chip instead of placed on different chips. It significantly reduces the number of required additional components on printed circuit boards, eliminates latch-up and provides built-in robustness against electromagnetic interference.
The XT018 SOI technology is the only available foundry process at 180nm for applications requiring the 100V to 200V voltage range. It is ideal for consumer, medical, telecommunication infrastructure and industrial applications that need bidirectional isolation, such as PoE applications, ultrasound transmitter drivers, piezo actuators and capacitive-driven micromechanics.
The new technology combines fully isolated MOS transistors for the high-voltage drain with a 180nm technology for 1.8V / 5.0V I/O and up to 6 metal layers. Its unique process architecture, utilizing a super-junction architecture with patented dielectric HV termination for the MOS transistors, allows compact design with a Ron as low as 0.3Wmm² for 100V and 1.1Wmm² for 200V nMOS transistors. The HV MOS transistors are designed to have identical electrical parameters for both low- and high-side operation.
The modular approach of the XT018 process includes a 5V-only module for analog-focused applications, and HVnmos and Hvpmos modules that can be selected separately. The technology is fully characterized for a temperature range of -40°C to 175°C.
In addition to the HV transistors, the new XT018 technology offering provides a thick metal option to support high-current routing, isolated 10V MOS, basic junction diodes and bipolar transistors, medium- and high-ohmic poly resistors, and an area-efficient high-capacity MIM (2.2 to 6.6 fF/µm²), as well as a high-voltage capacitor. The super-junction technology allows rectifying diodes with 20ns reverse recovery time, enabling rectifiers and bootstrap circuitry to be integrated efficiently on the chip rather than off-chip.
Sebastian Schmidt, product marketing manager for X-FAB’s High Voltage product line, said, “Our XT018 technology provides exceptional dielectrically isolated high-voltage support. Such isolation makes it easier to design for short innovation cycles, is straightforward, and results in a faster time to market.”
The XT018 PDK is available now, so designers can start designing right away.
X-FAB plans to host a free webinar on the new XT018 process later this year.
X-FAB is the leading analog/mixed-signal foundry group manufacturing silicon wafers for analog-digital integrated circuits (mixed-signal ICs). X-FAB maintains wafer production facilities in Erfurt, Dresden and Itzehohe (Germany); Lubbock, Texas (U.S.); and Kuching, Sarawak (Malaysia); and employs approximately 2,400 people worldwide. Wafers are manufactured based on advanced modular CMOS, BiCMOS and MEMS processes with technologies ranging from 1.0 to 0.13 micrometers, for applications primarily in the automotive, communications, consumer and industrial sectors. For more information, please visit www.xfab.com.
BiCMOS Bipolar junction transistor and CMOS transistor integration
CMOS Complementary metal oxide semiconductor
Hvnmos High-voltage n-channel metal-oxide semiconductor
Hvpmos High-voltage p-channel MOS
MOS Metal oxide semiconductor
PCB Printed circuit board
PDK Process design kit