11 entries, filtered by: High Temperature
Published: March 2006

The feasibility of EEPROM memories in SOI process technologies has been proven. It has also been shown that known data retention problems at high temperatures caused by leakage currents can be solved without extra circuitry. In this paper results of EEPROM cell matrix measurements regarding functionality and reliability will be presented. Different cell designs will be compared. Furthermore, a 32x16 bit EEPROM prototype and memory test results will be shown.