87 entries, filtered by: CMOS
Published: October 2012

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18µm PSOIHV process. The superjunction drift region helps in achieving uniform electric field distribution in both structres but also contributes to the on-state current in the LIGBT.


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Published: September 2012

Gate oxide early breakdown was investigated. It was verified that the gate oxide quality is good and failure was due to extrinsic causes. The failure, which was localized at the edge of LOCOS was similar to Kooi effect. However, investigations showed that it was due to nitridation occured during high temperature nitrogen anneal. Investigation methods to find the root cause of failure were explained. Alternative methods to solve the failure were explored; including thickening the sacrificial oxide layer and changing the nitrogen anneal process sequence. Final solution was chosen based on PCM stress test, QBD and TDDB result with minimal process change.


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Published: September 2012

Reliability tests assessment are used to evaluate the quality of different process schemes of MIM capacitors. Typically, VRAMP tests can be used to check for extrinsics; which are common and popular method used for evaluating yield issues and early life failures (in which the product failures in ppm level); while TDDB tests are used to determine the intrinsic quality of the capacitor dielectrics; thus the lifetime will be extrapolated accordingly from its dependency from accelerated tests at different higher stress conditions down to the corresponding use condition.


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Published: August 2012

The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to 175ºC. All modules are comparable in Design Rules and Transistor Performance with our corporate state of the art 0.35 μm CMOS Processes. Comprehensive design rules, precise SPICE models, analog and digital libraries, IP’s and development kits support the process on platforms supplied by the major EDA tool vendors.


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Published: June 2012

Sensors are everywhere, serving as an interface between our analog world and the digital world of data processing in electronic systems. Is your design challenge – making sensor output signals available to complex digital systems – further complicated by the need for low noise, temperature-dependent behavior and non-linear effects? If you are looking for solutions for low noise amplification and temperature drift, non-linearity or signal offset compensation, don’t miss this free webinar. It helps designers select the right technology for low-noise and high-precision sensor interfaces. You’ll get tips for achieving excellent matching for robust circuits, and see how X-FAB’s sophisticated modelling enables first-time-right analog and mixed-signal designs.


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Published: June 2012

This paper demonstrates and discusses novel “three dimensional” silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures.


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Published: June 2012

The XU035 series is X-FAB’s 0.35-micrometer Modular 700V Ultra-High-Voltage (UHV) Technology. Based upon the standard 1P3M process with single 5V gate oxide, 0.35-micron drawn gate length and metal design rules, the platform is engineered for applications needing an integrated power and startup device solution.


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Published: May 2012

Overwhelmed by the complexity of 700V designs due to cross talk, ESD, reliability or latch-up issues? Are your design challenges compounded by chip size and time-to-market issues? This webinar showcases X-FAB's new CMOS-based process for ultra-high-voltage apps such as AC LED lighting, ultra-low standby/no-load power and other power conversion and control applications. The combination of this cost-competitive process architecture and X-FAB’s design support enables first-time-right/first time functional designs for high-voltage lighting and power supply applications


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Published: March 2012

Electrostatic discharge (ESD) is a serious threat to integrated circuits (ICs) that can cause irreversible damage. This webinar on ESD protection will show you solutions on how to eliminate ESD threats in complex analog/mixed-signal and high-voltage designs. It covers an overview of various ESD protection concepts, and explains the structures and schemes available to protect against electrostatic discharge in X-FAB’s enhanced 0.35 and 0.18 micrometer XH035 and XH018 high-voltage foundry processes. The webinar presentation also highlights similarities and differences among ESD protection concepts, outlining the advantages and disadvantages of each in circuit designs.


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Published: March 2012

X-FAB, a pure play foundry, has already extensive experience in volume production of monolithic integrated MEMS devices. The idea of combining CMOS and MEMS processes to obtain monolithic integrated sensor solutions is a logical, consequent step following the “More than Moore” strategy.


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