19 entries, filtered by: Opto
Published: November 2015

Image sensors are used more and more in daily life, not only in mobile phones, cars and computers, but also in areas such as medical, industrial and scientific applications. There are various challenges in pixel design, and especially so for large 4 transistor pixels which are necessary for high speed applications.
This webinar will give practical suggestions on the design of three- and four transistor pixels. It will provide some tips how to improve the speed of large pixels and generally on how to optimize designs that require large silicon areas. You will also receive information about X-FAB’s newly released 0.18µm process platform XS018 which is optimized for image sensor applications and comes with features such as a pinned photo diode for 4 transistor pixel designs and low dark current.


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Published: May 2015

Ultraviolet (UV) sensitive Silicon based photodiodes integrated into a high-voltage modular 0.35 μm CMOS technology are presented. 


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Published: May 2015

With 2015 designated as “Year of the Light” by UNESCO, X-FAB will reflect this theme with a free webinar in May about its integrated photo diodes that span the light spectrum from ultra-violet to infra-red. Come learn the challenges of supporting all parts of the spectrum with highly sensitive photo diodes. See how various photo diode structures compare in terms of light sensitivity, dark current and capacitance. Find out how to select the right devices for your optical sensor applications.


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Published: May 2013

What happens when optical signals are converted to electrical signals? Focusing on the optical to electrical conversion process, this webinar sheds some light on the basics of light interaction from reflection, transmission, polarization and refraction to absorption with semiconductors devices. It explores electrical fields, recombination and lifetime, doping profiles, band structures and pn-junctions to determine what happens when light has been converted into electron-hole pairs. This webinar provides a solid overview of passive and active optical sensor elements manufactured in a mixed-signal CMOS process or added during post processing


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Published: May 2013

The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.


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Published: December 2012

We present a method for producing monolithically integrated CMOS optical filters with different and customerspecific responses. The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.


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Published: February 2012

PIN photodiodes are often used in optical integrated circuits. Although they can feature a very good RF-performance, this can be effected by the optical power density of the incident light. The influence of this effect on the RF-performance of PIN photodiodes is described. When a critical optical power density in the epi-layer is exceeded the 3dB frequencies are cut off. An analytical equation is derived to describe the effect. The results are compared to RF measurements and verified by numerical simulation.


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Published: September 2011

Diodes inherent in a CMOS process are light sensitive and could be exploited as photodetectors. To detect light the photo generated carriers need to be separated by the electrical field of an internal pn junction. They are either generated inside the depletion region or can get there by diffusion. The depth where these carriers are generated depends strongly on the wavelength. The generation profile, the pn junction depth and the diffusion length all impact the spectral sensitivity.


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Published: June 2011

Photo detector integrated circuits (PDIC) require high-sensitivity and high-bandwidth photo diodes for the latest generation of Blu-ray data storage devices. Due to the very short 405nm wavelength used, carriers are generated close to the surface. Standard photo diodes have only a low sensitivity for blue light. Therefore, special adapted photo diodes are necessary to support sensitivity higher than 0.25A/W for a 405nm wavelength.


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Published: June 2011

XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing sensitive high bandwidth photo diodes arrays or CMOS image sensors for such applications as optical data storage, optical data communication or high dynamic range cameras.


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