0.6 Micron Modular Trench Isolated SOI CMOS Technology
Logic
Analog M/S
Trench SOI
High Voltage
The XT06 Series complements X-FAB's 0.6 micrometer Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers, which allows unrestricted 60 V high and low side operation of all devices. The process offers reduced parasitics which results in smaller crosstalk, reduced noise and better EMC characteristics. XT06 thus allows innovative circuit design with reduced circuit complexity. CMOS as well as bipolar transistors are available with breakdown voltages of up to 110 V. The 5 V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 μm CMOS processes. For analog applications, several capacitor and resistor devices can be realized using the double poly architecture.
Available Modules
Trench SOI 0.6µm CMOS Core Module (1P2M)
ESD Implant Module
Mid-oxide Module
Medium Voltage PMOS Module
Extended Medium Voltage NMOS Module
Medium/high Voltage Depeltion NMOS Module
High Voltage Module
Extended High Voltage Module
Extended High Voltage PMOS Module
Double Poly Capacitor/(high resistor/low T.C.) Resistor Module
Linear Capacitor Module
Optical Window Module
3 Metals Layer Module
Thick Third Metal Module
Polyimide Module






