Name | Process Description | Poly Metal | Core (V) | I|O (V) | MV|HV (V) | Opto | NVM | OTP | Data Sheet |
|---|---|---|---|---|---|---|---|---|---|
CMOS | |||||||||
High performance mixed signal, high temperature, high-voltage and NVM | 1P|6M | 1.8 | 3.3 | 6|10|15|20|40|45 | x | eFlash | x | ||
High performance analog mixed signal | 1P|6M | 1.8 | 3.3 5.0 | - | - | - | x | ||
Power Management | 1P|6M | 1.8 | 5.0 | 13|15|25|30|40|45|60 | - | eFlash | x | ||
Analog/digital mixed signal baseline | 2P|5M | 2.5 | 3.3 | - | - | eFlash | x | ||
High performance | 2P|4M | 3.3 | 3.3 5.0 | 12|14|18|45|55|75|100 | x | E2 | x | ||
High temperature analog mixed signal | 2P|4M | 3.3 | 3.3 5.0 | 12|14|18|45|55|75|100 | - | E2 | x | ||
High speed opto | 2P|3M | 3.3 | 3.3 | 12 | x | - | - | ||
Ultra-High-Voltage | 1P|3M | 5.0 | 5.0 | 20|40|700 | - | - | x | ||
Analog mixed signal baseline | 2P|3M | 5.0 | 3.3 | 12 | - | - | x | ||
High performance analog mixed signal | 2P|3M | 3.3 | 3.3 | 8|12|40|60 | x | eFlash | x | ||
Analog mixed signal baseline | 2P|3M | 5.0 | 5.0 | 40|60 | x | E2 | x | ||
Analog mixed signal baseline | 2P|3M | 1.1|3.3 | 5.0 | 7|12|40|50|100 | x | E2 | x | ||
BiCMOS | |||||||||
0.6 µm | High precision analog RF and opto process | 2P|3M | 3.3 | 5.0 | 12|30 | x | - | x | XB06 Data sheet |
0.6 µm | High voltage high precision analog RF process | 2P|3M | 5.0 | 3.3 | 12|15|20|30 | x | x | x | XHB06 Data sheet |
SOI | |||||||||
0.18 µm | Trench isolated high | 1P|6M | 1.8 | 5.0 | 10|100|140|200 | - | - | x | XT018 Data sheet |
0.6 µm | Trench isolated high | 1P|3M | 5.0 | 5.0 | 8|12|40|60 | x | - | x | XT06 Data sheet |
1.0 µm | High voltage, partly depleted SOI BCD | 1P|3M | 5.0 | 5.0 | 70|100 | - | - | x | XI10 Data sheet |
1.0 µm | Trench isolated high | 3P|3M | 5.0 | 5.0 | 7|20|350|650 | x | - | x | XDH10 Data sheet |
1.0 µm | Trench isolated high | 3P|3M | 5.0 | 5.0 | 7|20|275|350 | x | - | x | XDM10 Data sheet |
Legend:
x | : Available |
- | : Not available |
