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XC018 LP 3.3V abgpc03 is a low-voltage bandgap reference with N-well resistors.

XC018 LP 5V abgpc03_5v is a robust low-voltage bandgap reference with N-well resistors. The cell features wide range of supply voltages and is stable with large capacitive loads.

XH035: A_CELLS. For MOS module only. abgpc04 is a general purpose bandgap reference with Poly2 resistors.

XT06 

XH018 LP3MOS 3.3V abgpc04_3v3 is a low-voltage bandgap reference with N-well resistors.

XC018 LP 5V abgpc04_5v is a robust low-voltage bandgap reference with N-well resistors. The cell features wide range of supply voltage and is stable even with large capacitive loads.

XH018 LP3MOS 1.8V abgpc05_1v8 is a general purpose 1.2V bandgap reference with N-well resistors and NPN (qnva) diode matrix.

XH035: A_CELLS. For MOS module only. abgpc07 is a low-supply voltage bandgap reference with N-well resistors. The cell features low supply current and low noise.

XC10: A_CELLS; A_CELLS_M1. abiac01 is a general purpose VTH - based current reference. The circuit forces a current of 2.4μA (approx.) to flow through P- or N-MOS transistor with a W/L ratio of 10μm/6μm.

XB06: A_CELLS. abiac01 is a bias voltage source (VBP1, VBN1) which needs a bandgap cell for biasing.

XH035: A_CELLS. For MOS module only. abiac01 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ration of 6µm/6µm.

XTabiac01 is a general purpose low-current bias cell. the circuit forces a current of 200nA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/12µm.

XC018 LP 3.3V abiac01_3v3 is a general purpose bias cell. The circuit forces a current of 200nA (approx.) to flow through PMOS with W/L ratio of 8µm/10µm and NMOS with W/L ratio of 4µm/20µm.

XH018 LP3MOS 3.3V abiac01_3v3 is a general purpose bias cell. the circuit provides bias voltages so that a current of 200nA (approx.) to flow through PMOS with W/L ration of 8µm/10µm and NMOS with W/L ratio of 4µm/20µm.

XC10: A_CELLS; A_CELLS_M1. abiac02 is a general purpose weak inversion bias cell. The circuit forces a current of 250nA (approx.) to flow through P- or N-MOS transistors with a W/L ratio of 10μm/10μm.

XB06: A_CELLS. abiac02 is a bias voltage source (VBP2, VBN2) which needs a bandgap cell for biasing.

XH035: A_CELLS. For MOS module only. abiac02 is a general purpose V_TH-based bias cell, a plain substitute for abiac01. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 6µm/6µm and NMOS with W/L ration

XT06 abiac02 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm.

XC018 LP 3.3V abiac02_3v3 is a general purpose bias cell. The circuit forces a current of 2µA (approx.) to flow through PMOS with W/L ratio of 10µm/4µm and NMOS with W/L ratio od 6µm/12µm.

XH018 LP3MOS 3.3V abiac02_3v3 is a general purpose bias cell. the circuit provides bias voltages so that a current of 2µA (approx.) to flow through PMOS with W/L ration of 10µm/4µm and NMOS with W/L ratio of 6µm/12µm.

XB06: A_CELLS. abiac03 is a bias voltage source (VBP3, VBN3) which needs a bandgap cell for biasing.

XH035: A_CELLS. For MOS module only. abiac03 is a general purpose weak inversion bias cell. The circuit forces a current of 200nA (approx.) to flow through PMOS with W/L ratio of 6µm/12µm and NMOS with W?L ration of 6µm/20µm.

XT06 abiac03 is a general purpose biac cell. The circuit forces a current of10µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/6µm.

XC018 LP 3.3V abiac03_3v3 is a general purpose bias cell. The circuit forces a current of 10µA (approx.) to flow through PMOS with W/L ratio of 24µm/2µm and NMOS with W/L ratio od 14µm/6µm.

XH018 LP3MOS 3.3V abiac03_3v3 is a general purpose bias cell. the circuit provides bias voltages so that a current of 10µA (approx.) to flow through PMOS with W/L ration of 24µm/2µm and NMOS with W/L ratio of 14µm/6µm.

XH035: A_CELLS_HV. For MOS module only. abiac04 is a high voltage bias cell. The circuit forces a current of 2µA (approx.) to flow through PHV with W/L ratio of 8µm/12µm and NHV with W/L ratio of 8µm/14µm.

XT06 abiac05 is a general purpose VTH - based bias cell, a cheaper substitute for abiac02. The circuit forces a current of 2µA (approx.) to flow through P- or N- MOS with W/L ratio of 10µm/10µm.

XT06 abiac06 is a general purpose V_TH - based bias cell, a cheaper substitute for abiac03. The circuit forces a current of 10µA (approx.) to flow through P- or N- MOS with W/L ration of 10µm/6µm.

XH018 LP3MOS 1.8V abiac06_1v8 is a general purpose low voltage (down to 1.2V) bias cell. The circuit forces a current of 2µA (approx.) to flow through N-MOS with W/L ratio of 20µm/8µm.

XC018 LP 5V abiac06_5v is a general purpose bias cell. The circuit forces a current of 10µA (approx.) to flow through PMOS with W/L ratio of 24µm/3µm and NMOS with W/L ratio of 10µm/4µm.