25 entries, filtered by: Automotive
Published: December 2012

The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.


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Published: November 2013

The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and full  custom designs for Industrial, Automotive and Telecommunication products. Based on a single poly, triple metal 0.35-micron drawn gate length process for digital applications, process modules are available such as embedded Non-Volatile Memory, high voltage options, as well as standard or thick fourth layer metal, double-poly and MIM capacitor and high resistance polysilicon.


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Published: June 2011

XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing sensitive high bandwidth photo diodes arrays or CMOS image sensors for such applications as optical data storage, optical data communication or high dynamic range cameras.


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Published: January 2009

The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.


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Published: August 2010

The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS (BCD) Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power management, RF circuits and high precision analog applications mixed with digital parts for Telecommunication, Consumer, Automotive and Industrial products. The digital part is fully compatible with X-CMOS 0.6 process family.


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Published: September 2007

Using silicon-based MEMS technologies, the cost-efficient production of gyroscopes has become possible in recent years. As a result, gyroscopes are entering new markets, such as for highly accurate GPS-Instruments where the gyroscope enhances accuracy in situations where satellite reception is lost, for example in tunnels. However, since all gyroscopes are very precise resonating measurement devices, this leads to stringent wafer processing requirements for their production.


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Published: May 2007

A new smart power SOC IC process including up to 50V HV-MOS transistors, SONOS principle based non-volatile memory components and analog devices using an advanced 0.18μm platform is presented. Process architecture and device portfolio are focused on automotive applications e.g. sensor signal conditioning and integrated output drivers. HV-MOS and SONOS integration as well as device properties are discussed with regard to reliability aspects. Additionally key features of NPN bipolar transistors and depletion NMOST are given.


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Published: October 2009

At high temperature, designers are faced with additional technological and design challenges. These issues and how to address them are discussed in this presentation. The webinar looks at X-FAB's high temperature solutions, in particular its latest High Temperature Modular CMOS process (XA035), a comprehensive CMOS offering with High Voltage (HV), RF, and EEPROM integration that is suitable for temperatures up to 175C. The presentation also covers high temperature modelling, application specific reliability and design for reliability.


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Published: April 2010

The integration of full custom analog circuitry into a silicon chip, to provide cost-effective products, requires a full understanding of the process architecture and uses completely different methods compared with those used for digital designs. This webinar briefly covers the digital design arena before entering into in-depth discussion of analog layout techniques. It explores the integration of X-FAB-supported primitive devices into complex integrated chips in detail, including diffusions, wells and associated layers that can be merged. The session also covers derivation of "well" combinations from the design layers, and gives guidelines for high-voltage interconnects across these well regions to avoid parasitic leakage paths.


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Published: July 2010

Emerging applications in the field of lithium-ion battery management and Power over Ethernet require operating voltages of up to 100V, robust primitive devices and low on-resistance. X-FAB’s enhanced 0.35 micrometer high-voltage foundry process XH035 offers these features combined with high reliability and a small silicon footprint.


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