90 entries, filtered by: CMOS
Published: November 2015

Image sensors are used more and more in daily life, not only in mobile phones, cars and computers, but also in areas such as medical, industrial and scientific applications. There are various challenges in pixel design, and especially so for large 4 transistor pixels which are necessary for high speed applications.
This webinar will give practical suggestions on the design of three- and four transistor pixels. It will provide some tips how to improve the speed of large pixels and generally on how to optimize designs that require large silicon areas. You will also receive information about X-FAB’s newly released 0.18µm process platform XS018 which is optimized for image sensor applications and comes with features such as a pinned photo diode for 4 transistor pixel designs and low dark current.


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Published: May 2015

Ultraviolet (UV) sensitive Silicon based photodiodes integrated into a high-voltage modular 0.35 μm CMOS technology are presented. 


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Published: March 2015

For gate driver ICs in three phase power applications level shifters with more than 900V operating voltage are required. The extension of the voltage rating of an existing trench isolated SOI process was done with different device concepts: Serial stacking of lower voltage devices was evaluated as an alternative approach to conventional quasi-vertical and charge compensated lateral devices which need layout and material modifications. 


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Published: November 2013

The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and full  custom designs for Industrial, Automotive and Telecommunication products. Based on a single poly, triple metal 0.35-micron drawn gate length process for digital applications, process modules are available such as embedded Non-Volatile Memory, high voltage options, as well as standard or thick fourth layer metal, double-poly and MIM capacitor and high resistance polysilicon.


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Published: May 2013

What happens when optical signals are converted to electrical signals? Focusing on the optical to electrical conversion process, this webinar sheds some light on the basics of light interaction from reflection, transmission, polarization and refraction to absorption with semiconductors devices. It explores electrical fields, recombination and lifetime, doping profiles, band structures and pn-junctions to determine what happens when light has been converted into electron-hole pairs. This webinar provides a solid overview of passive and active optical sensor elements manufactured in a mixed-signal CMOS process or added during post processing


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Published: May 2013

The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.


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Published: May 2013

This paper demonstrates a novel lateral superjunction (SJ) lateral insulated gate bipolar transistor (LIGBT) fabricated in 0.18μm partial silicon on insulator (PSOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations.


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Published: May 2013

The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, integrated with high voltage and Non-Volatile-Memory modules, the platform is engineered for applications needing an integrated solution and cost efficient process for high performance analog ICs. Targeted applications are switching applications, lighting, display, etc; operating in temperature range of -40 to 175 °C.


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Published: December 2012

We present a method for producing monolithically integrated CMOS optical filters with different and customerspecific responses. The filters are constituted by a Fabry-Perot resonator formed by two Bragg mirrors separated by a patterned cavity. The filter response can be tuned by changing the geometric parameters of the patterning, and consequently the cavity effective refractive index. In this way, many different filters can be produced at once on a single chip, allowing multichanneling. The filter has been designed, produced, and characterized. The results for a chip with 24 filters are presented.


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Published: December 2012

The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron drawn gate length N-well process, integrated with highvoltage and Non-Volatile-Memory modules, the platform is ideal for SOC applications in the automotive market, as well as emdedded high-voltage applications in the communications, consumer and industrial market.
Comprehensive design rules, precise SPICE models, analog and digital libraries, IPs and development kits support the process for major EDA vendors.


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