33 entries, filtered by: More than Moore
Published: May 2015

Ultraviolet (UV) sensitive Silicon based photodiodes integrated into a high-voltage modular 0.35 μm CMOS technology are presented. 


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Published: March 2015

The design of a system containing integrated MEMS is still a task which requires deep knowledge of the MEMS process itself. Even with the availability of COT MEMS foundry processes, which support the design of MEMS according to process-specific design rules, the quality of results heavily depends on the skills and know-how of the involved designers. Reasons for this are the lack of a sufficient design automation, which would implement and verify parts of the expert knowledge, as well as the missing process abstraction, which would encapsulate the foundry-specific rules and parameters.


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Published: August 2014

Serial stacking of high voltage devices in a SOI process to achieve higher operating voltages is an alternative approach to layout and material modifications being necessary in a conventional quasi-vertical approach. Based on a sufficient 900 V trench isolation the stacking was first tested with existing lower voltage diodes and compared to new 900 V diodes with the conventional quasi-vertical construction.


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Published: March 2012

X-FAB, a pure play foundry, has already extensive experience in volume production of monolithic integrated MEMS devices. The idea of combining CMOS and MEMS processes to obtain monolithic integrated sensor solutions is a logical, consequent step following the “More than Moore” strategy.


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Published: February 2012

Moore’s law has been a strong influence on mainstream microelectronics over the past few decades, where the trends of decreasing feature size and increasing transistor count have driven the semiconductor industry forward. This philosophy has worked very well for memories and microprocessors in the digital world. Additional analog functions, by interfacing with the physical world, enable cost-optimized and value-added system solutions.


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Published: December 2011

In this webinar you will learn how X-FAB can support & manufacture your power system-on-chips (SoC) with its latest 0.18 micrometer technology (XP018). This foundry process for power management applications comes with a unique combination of high-voltage and high-density non-volatile memory (NVM) options with the lowest mask count in the industry. Find out why it is well-suited for cost optimized migration of existing solutions in larger geometries to 180 nanometers. You will also learn about the various memory options and its competitive RDSon for switching and power control in the 15V, 25V, 40V, 60V range.


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Published: September 2011

Diodes inherent in a CMOS process are light sensitive and could be exploited as photodetectors. To detect light the photo generated carriers need to be separated by the electrical field of an internal pn junction. They are either generated inside the depletion region or can get there by diffusion. The depth where these carriers are generated depends strongly on the wavelength. The generation profile, the pn junction depth and the diffusion length all impact the spectral sensitivity.


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Published: September 2011

Using a trench isolated 650V quasi-vertical n-channel DMOS as a starting point several new 650V transistor types have been evaluated. Mainly by design measures a 650V depletion DMOS, a 650V PMOS and a 650V IGBT were created for a modular integration into the process flow.


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Published: July 2011

An enhancement-mode Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been developed in 0.13μm technology platform. The single-transistor (1-T) SONOS device in NOR Flash memory array utilizes n-channel cells. The development of 1-T SONOS is not an easy feat due to many disturbs experienced by the cells during operation.


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Published: June 2011

In this paper, micromachined acceleration sensors as ready-to-use Intellectual-Property-Blocks (IP-Blocks) are introduced. These standard elements are available for a special surface micromachining foundry technology. They are ready to use, characterized and qualified design elements, which can be customized by changing the peripheral elements such as bond pads, and allow the fast prototyping and production start of high-performance inertial sensors.


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