14 entries, filtered by: SoC
Published: January 2013

The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length process, integrated with high voltage and Non-Volatile-Memory modules, the platform is specifically designed for a new generation of cost-effective "Super Smart Power" technology; operating in temperature range of -40 to 175 °C.


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Published: February 2012

Moore’s law has been a strong influence on mainstream microelectronics over the past few decades, where the trends of decreasing feature size and increasing transistor count have driven the semiconductor industry forward. This philosophy has worked very well for memories and microprocessors in the digital world. Additional analog functions, by interfacing with the physical world, enable cost-optimized and value-added system solutions.


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Published: December 2011

Based on specific technology flows, various surface layers are bonded by glass frit wafer bonding. In this paper, the behaviour of typical layers, such as TEOS, Nitride and thermal oxide, and their effect on the bonding results are introduced.


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Published: December 2011

In this webinar you will learn how X-FAB can support & manufacture your power system-on-chips (SoC) with its latest 0.18 micrometer technology (XP018). This foundry process for power management applications comes with a unique combination of high-voltage and high-density non-volatile memory (NVM) options with the lowest mask count in the industry. Find out why it is well-suited for cost optimized migration of existing solutions in larger geometries to 180 nanometers. You will also learn about the various memory options and its competitive RDSon for switching and power control in the 15V, 25V, 40V, 60V range.


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Published: January 2011

Visualization is still the most important tool in medical diagnostics to allow for the physician, in combination with their medical knowledge, to detect diseases within the human body and choose healing treatments in order to enable recovery. For minimal invasive surgical operations that use endoscopic tools, imaging camera modules that have both a small volume and a good resolution are necessary to ensure the success of the surgical treatment.
Microsystem technologies now allow for the direct integration of imaging optics and sensors in a system.


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Published: April 2010

The exponential growth of opto-electronic applications such as digital cameras and mobile phones during the past few years has followed the same Moore’s Law scenario as memories and digital gates did in the past. These low-cost, high-volume applications require highly specialized fabs and processes to achieve the lower node size that allows for higher pixel count and higher resolution. Moore’s Law works very well for these high-volume applications. However, it falls short for several other applications that require the integration of various opto-sensitive components. These applications might have varying technical requirements for sensitivity, supported wavelength, noise and bandwidth; and commercial volume requirements spanning from low to high. In addition, many Silicon on Chip (SoC) solutions also require multiple analog functions, including opto-electronic sensors. Highly specialized fabs that follow Moore’s Law simply lack the flexibility to support all of these different requirements.


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Published: August 2009

In SOC (System on Chip) technology, the various types of devices located on an IC chip typically have different operating voltages thus requiring multiple gate oxide layers of different thickness to be formed. In order to form different gate oxide, several oxide removal and growth steps have to be carried out which make the process more complex and particularly have a detrimental impact on the Shallow Trench Isolation (STI) structures.


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Published: August 2008

The XC018 series is X-FAB’s 0.18 micron Modular Logic and Mixed Signal Technology. The platfrom is ideal for SOC application. Main target applications are standard cell, semi-custom and full custom designs for Automotive, Consumer, Industrial as well as Telecommunication products, while the low power and high voltage process is ideal for mobile applications as well as display drivers or controllers. Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate oxide (1.8V with 3.3V or 5.0V) transistors.


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Published: July 2008

In this paper, a 40V versatile HV LDMOS technology with lower Rdson has been developed in the existing 0.18μm LV CMOS process. The HV LDMOS are designed by using DOE concept on the simulation results from T-supreme followed by Medici.


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Published: May 2008

The snapback trigger voltage of the NDMOS in a 0.18μm automotive smart power technology is strongly reduced at large gate bias. This behavior of the deep-submicron multiresurf NDMOS, which makes its ESD protection difficult and limits its electrical safe operating area, and the influence of various device modifications are investigated by TCAD simulation. SCR-based ESD protection schemes for I/O and power supply protection are presented. For supply protection the SCR is modified to increase its holding voltage. The ability to protect the NDMOS at non-zero gate bias is discussed.


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