0.6 Micron Modular Mixed Signal Technology with Embedded Non Volatile Memory and High Voltage Options
Logic
Analog M/S
NVM
High Voltage
BCD
Opto
The XC06 Series complements X-FAB's 0.6 micrometer Modular Mixed Signal Technology with embedded non-volatile memory and high voltage options. EEPROM blocks up to 32 kbit and Flash memories up to 512 kbit can be integrated in standard cell, semi-custom and full custom designs for industrial, automotive and telecommunication products.
MOS and bipolar transistors are available with breakdown voltages of up to 100 V. The 5 V CMOS core is compatible in design rules and transistor performance with state-of-the-art 0.6 μm CMOS processes.
For analog applications, several capacitor and resistor devices can be realized using the double poly non-volatile memory architecture.
Available Modules
Standard 5V 0.6µm CMOS Core Module (1P2M)
ESD Implant Module
Medium Voltage NMOS Module
Medium Voltage PMOS Module
Extended Medium Voltage NMOS Module
Medium/high Voltage Depletion NMOS Module
High Voltage Graded PMOS Module
High Voltage Module
Extended High Voltage DMOS Module
Exended High Voltage PMOS Module
Triple Well Isolated CMOS Module
Triple Well Bulk Isolated CMOS Module
Double Poly Capacitor/(high resistor/low T.C.) Resistor Module
Linear Capacitor Module
Schottky Diode Module
ROM Module
EEPROM Module
FLASH Module
Optical Window Module
PIN Diode Module
3 Metals Layer Module
Thick Metal Module
Polyimide Module
