0.35 Micron Modular Mixed Signal Technology with High Voltage Extensions
Logic
Analog M/S
NVM
High Voltage
(up to 100V)
BCD
Opto
RF
The XH035 series is X-FAB's 0.35 micrometer Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for industrial, automotive and telecommunication products. Based on a single poly triple metal 0.35 μm drawn gate length process for digital applications, it features core and process modules such as low Vt, low leakage, embedded non-volatile memory and high voltage options, as well as standard or thick fourth layer of metal, double poly and MIM capacitors and high resistance polysilicon. MOS and bipolar transistors are also available.
NEW: DMOS transistors are available for multiple operating voltages up to 100V. The 45V DMOS transistors come with a 45 percent lower on-resistance which can reduce the chip area by up to 40 percent, resulting in significant cost savings.
The 3.3 V CMOS cores are compatible in design rules and transistor performance with state-of-the-art 0.35 μm CMOS processes.
Available Modules
Standard, Low Threshold or Low Leakage 3.3V or Standard 5V Core Module (1P3M)
Mid Gate Oxide Module
Isolated MOS Module
Thick Gate Oxide Module
Medium Voltage NMOS Module
Medium Voltage PMOS Module
NEW: Mid Gate Oxide Module for High-voltage Transistors
NEW: Thick Gate Oxide Module for High-voltage Transistors
Depletion NMOS Module
Buried N Module
Double Polysilicon Capacitor Module
Low Resistance Polysilicon Module
High Resistivity Polysilicon Module
Very High Resistivity Polysilicon Module
EEPROM, Tiny EEPROM, or Core EEPROM Module (NEW)
Single or Double MIM Capacitor Modules
2 Metals Layer Module
4 Metals Layer Module
NEW: Thick Top Metal 3 or Thick Top Metal 4 Modules
OPTO Module
NEW: Polyimide Module
